2n720a silicon npn transisto r data sheet description sem i coa sem i conductors offers: ? screening and processing per mil-prf-19500 appendi x e ? jan level (2n720aj) ? jantx level (2n720ajx) ? jantxv level (2n720ajv) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 m e thod 2072 for jantxv ? radiation testing (total dose) upon request please contact sem i coa for speci al confi gurat i ons www. semicoa .com or (714) 979-1900 applications ? general purpose ? low power ? npn silico n tran sisto r features ? herm etically sealed to-18 m e tal can ? al so avai l a bl e i n chi p confi gurat i on ? c h i p geom et ry 4500 ? r e ference docum ent : m i l-pr f-19500/ 182 benefits ? qu alificatio n lev e ls: jan, jantx, jantxv ? r a di at i on t e st i ng avai l a bl e absolute maximum ratings t c = 2 5 c u n l ess o t h e rw ise sp ecified p a r a m e t e r s y m b o l r a t i n g u n i t co llecto r-em itter vo ltag e v ceo 8 0 vol t s collector-base voltage v cbo 1 2 0 vol t s em itter-base vo ltag e v ebo 7 vo l t s c o l l ect or c u rrent , c ont i nuous i c 5 0 0 m a power di ssi pat i on, t a = 25 o c derat e l i n earl y above 37.5 o c p t 0.5 3.08 w mw / c power di ssi pat i on, t c = 25 o c derat e l i n earl y above 25 o c p t 1.8 10.3 w mw / c operat i ng junct i on tem p erat ure storage tem p erature t j t stg -65 t o +200 c therm a l resistance r ja 325 c/w copy right ? 2002 semicoa semiconductors, inc. rev. f 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. sem icoa .com
copyright ? 2002 semicoa semiconductors, inc. rev. f 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2n720a silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 25 q c off characteristics parameter symbol test conditions min typ max units collector-emitter breakdown voltage v (br)ceo i c = 30 ma 80 volts collector-emitter breakdown voltage v (br)cer i c = 10 ma, r be = 10 : 100 volts collector-base cutoff current i cbo1 i cbo2 i cbo3 v cb = 120 volts v cb = 90 volts v ce = 90 volts, t a = 150 o c 100 10 15 p a na p a emitter-base cutoff current i ebo1 i ebo2 v eb = 7 volts v eb = 5 volts 100 10 p a na on characteristics pulse test: pulse width = 300 p s, duty cycle d 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 h fe4 i c = 1 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts i c = 150 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts, t a = -55 o c 20 35 40 20 120 base-emitter saturation voltage v besat i c = 150 ma, i b = 15 ma 1.3 volts collector-emitter saturation voltage v cesat i c = 150 ma, i b = 15 ma 5.0 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe | v ce = 10 volts, i c = 50 ma, f = 20 mhz 3 10 short circuit forward current transfer ratio h fe1 h fe2 f = 1 khz v ce = 5 volts, i c = 1 ma v ce = 10 volts, i c = 5 ma 35 45 100 150 short circuit input impedance h ie v cb = 10v, i c = 5ma 4 8 : open circuit output admittance h oe v cb = 10v, i c = 5ma 0.5 p : open circuit reverse voltage transfer ratio h re v cb = 10v, i c = 5ma 1.5x10 -4 open circuit output capacitance c obo v cb = 10 volts, i c = 0 ma, 100 khz < f < 1 mhz 2 15 pf switching characteristics pulse response t on + t off 30 ns
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